Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy

被引：120

作者：

Oila, J

Kivioja, J

Ranki, V

Saarinen, K

Look, DC

Molnar, RJ

Park, SS

Lee, SK

Han, JY

机构：

[1] Aalto Univ, Phys Lab, FIN-02015 Espoo, Finland

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[3] MIT, Lincoln Lab, Lexington, MA 02420 USA

[4] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 20期

关键词：

D O I：

10.1063/1.1569414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Positron annihilation measurements reveal show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy. The concentration of Ga vacancies decreases, from more than 10(19) to below 10(16) cm(-3), as the distance from the interface region increases from 1 to 300 mum. These concentrations are the same as the total acceptor densities determined in Hall experiments. The depth profile of O is similar to that of V-Ga, suggesting that the Ga vacancies are complexed with the oxygen impurities. (C) 2003 American Institute of Physics.

引用

收藏

页码：3433 / 3435

页数：3

相关论文

共 18 条

[1] Spatial variation of luminescence in thick GaN films [J].

Bertram, F ;

Srinivasan, S ;

Ponce, FA ;

Riemann, T ;

Christen, J ;

Molnar, RJ .

APPLIED PHYSICS LETTERS, 2001, 78 (09) :1222-1224

[2] Electron beam and optical depth profiling of quasibulk GaN [J].

Chernyak, L ;

Osinsky, A ;

Nootz, G ;

Schulte, A ;

Jasinski, J ;

Benamara, M ;

Liliental-Weber, Z ;

Look, DC ;

Molnar, RJ .

APPLIED PHYSICS LETTERS, 2000, 77 (17) :2695-2697

[3] Evolution of deep centers in GaN grown by hydride vapor phase epitaxy [J].

Fang, ZQ ;

Look, DC ;

Jasinski, J ;

Benamara, M ;

Liliental-Weber, Z ;

Molnar, RJ .

APPLIED PHYSICS LETTERS, 2001, 78 (03) :332-334

[4] Microcathodoluminescence of impurity doping at gallium nitride/sapphire interfaces [J].

Goss, SH ;

Sun, XL ;

Young, AP ;

Brillson, LJ ;

Look, DC ;

Molnar, RJ .

APPLIED PHYSICS LETTERS, 2001, 78 (23) :3630-3632

[5] Characterization of free-standing hydride vapor phase epitaxy GaN [J].

Jasinski, J ;

Swider, W ;

Liliental-Weber, Z ;

Visconti, P ;

Jones, KM ;

Reshchikov, MA ;

Yun, F ;

Morkoç, H ;

Park, SS ;

Lee, KY .

APPLIED PHYSICS LETTERS, 2001, 78 (16) :2297-2299

[6] Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN [J].

Look, DC ;

Stutz, CE ;

Molnar, RJ ;

Saarinen, K ;

Liliental-Weber, Z .

SOLID STATE COMMUNICATIONS, 2001, 117 (10) :571-575

[7] Gallium vacancies and the yellow luminescence in GaN [J].

Neugebauer, J ;

Van de Walle, CG .

APPLIED PHYSICS LETTERS, 1996, 69 (04) :503-505

[8] Correlations between spatially resolved Raman shifts and dislocation density in GaN films [J].

Nootz, G ;

Schulte, A ;

Chernyak, L ;

Osinsky, A ;

Jasinski, J ;

Benamara, M ;

Liliental-Weber, Z .

APPLIED PHYSICS LETTERS, 2002, 80 (08) :1355-1357

[9] Ga vacancies and grain boundaries in GaN [J].

Oila, J ;

Saarinen, K ;

Wickenden, AE ;

Koleske, DD ;

Henry, RL ;

Twigg, ME .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1021-1023

[10] Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers -: art. no. 045205 [J].

Oila, J ;

Ranki, V ;

Kivioja, J ;

Saarinen, K ;

Hautojärvi, P ;

Likonen, J ;

Baranowski, JM ;

Pakula, K ;

Suski, T ;

Leszczynski, M ;

Grzegory, I .

PHYSICAL REVIEW B, 2001, 63 (04)