Wideband lumped scalable modeling of monolithic stacked transformers on silicon

被引：5

作者：

Biondi, T ^{[1
]}

Scuderi, A ^{[1
]}

Ragonese, E ^{[1
]}

Palmisano, G ^{[1
]}

机构：

[1] STMicroelect, I-95121 Catania, Italy

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

10.1109/BIPOL.2004.1365796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lumped model for monolithic stacked transformers on silicon is presented. It employs a novel topology that combines the simplicity of lumped models and the accuracy of distributed networks. Model parameters are calculated by means of closed-form expressions using geometrical and technological data. The accuracy of the proposed model is demonstrated by comparing simulations with on-wafer experimental measurements of several stacked transformers. The self-resonance frequency is used as a figure of merit to test the performance at very high frequencies. Moreover, the geometrical scalability is verified employing the S-parameters of transformers with different layout parameters and over a wide frequency range.

引用

页码：265 / 268

页数：4

共 8 条

[1] A fully integrated 4.8-6 GHz Power Amplifier with on-chip output balun in 38 GHz-fT Si-Bipolar [J].