Surface- and edge-states in ultrathin Bi-Sb films

被引:12
作者
Bihlmayer, G. [1 ,2 ]
Koroteev, Yu M. [3 ,4 ]
Chulkov, E. V. [3 ,5 ]
Bluegel, S. [1 ,2 ]
机构
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Forschungszentrum Julich, Inst Adv Simulat, D-52425 Julich, Germany
[3] Donostia Int Phys Ctr, San Sebastian 20018, Spain
[4] RAS, Inst Strength Phys & Mat Sci, Tomsk 634021, Russia
[5] Univ Basque Country, Dept Fis Mat, San Sebastian 20080, Spain
关键词
HGTE QUANTUM-WELLS; TOPOLOGICAL INSULATORS; ELECTRONIC-PROPERTIES; CRYSTAL STRUCTURE; BAND STRUCTURE; BISMUTH; ANTIMONY; PHASE;
D O I
10.1088/1367-2630/12/6/065006
中图分类号
O4 [物理学];
学科分类号
070305 [高分子化学与物理];
摘要
Employing first-principles calculations, we studied the electronic structure of ultrathin Bi-Sb films, focusing on the appearance of surface or edge states that are topologically protected. Our calculations show that in ordered structures the Bi-Sb bonds are quite strong, forming well-defined double layers that contain both elements. We find surface states appearing on the (111) surface of a thin film of layerwise ordered Bi-Sb compound, while thin films in (110) orientation are insulating. In the gap of this insulator, edge states can be found in a (110)-oriented ribbon in the A17 (black phosphorus) structure. While these states are strongly spin polarized, their topological properties are found to be trivial. In all structures, we investigate the influence of spin-orbit coupling and analyze spin polarization of the states at the boundaries of the material.
引用
收藏
页数:13
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