Channel formation in single-monolayer pentacene thin film transistors

被引:67
作者
Park, B-N [1 ]
Seo, Soonjoo
Evans, Paul G.
机构
[1] Univ Wisconsin, Mat Sci Program, Madison, WI 53706 USA
[2] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
关键词
D O I
10.1088/0022-3727/40/11/037
中图分类号
O59 [应用物理学];
学科分类号
摘要
The geometrical arrangement of single-molecule-high islands and the contact between them have large roles in determining the electrical properties of field effect transistors ( FETs) based on monolayer-scale pentacene thin films. As the pentacene coverage increases through the submonolayer regime there is a percolation transition where islands come into contact and a simultaneous rapid onset of current. At coverages just above the percolation threshold, the electrical properties vary with geometrical changes in the contacts between the pentacene islands. At higher coverages, the FET mobility is much lower than the mobility measured by the van der Pauw method because of high contact resistances in monolayer-scale pentacene film devices. An increase in the van der Pauw mobility of holes as a function of pentacene coverage shows that second layer islands take part in charge transport.
引用
收藏
页码:3506 / 3511
页数:6
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