Ferroelectricity in Si-Doped HfO2 Revealed: A Binary Lead-Free Ferroelectric

被引：160

作者：

Martin, Dominik ^{[1
]}

Mueller, Johannes ^{[2
]}

Schenk, Tony ^{[1
]}

Arruda, Thomas M. ^{[3
]}

Kumar, Amit ^{[3
]}

Strelcov, Evgheni ^{[3
]}

Yurchuk, Ekaterina ^{[1
]}

Mueller, Stefan ^{[1
]}

Pohl, Darius ^{[4
]}

Schroeder, Uwe ^{[1
]}

Kalinin, Sergei V. ^{[3
]}

Mikolajick, Thomas ^{[1
,5
]}

机构：

[1] Namlab gGmbH, D-01187 Dresden, Germany

[2] Fraunhofer IPMS CNT, D-01099 Dresden, Germany

[3] Oak Ridge Natl Lab, Imaging & Nanoscale Characterizat Grp, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

[4] Leibniz Inst Solid State & Mat Res IFW Dresden, Inst Metall Mat, D-01171 Dresden, Germany

[5] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 48期

关键词：

POLARIZATION; SILICON; FILMS;

D O I：

10.1002/adma.201403115

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

(Graph Presented) Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior. © 2014 Wiley-VCH Verlag GmbH & Co. KGaA.

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页码：8198 / 8202

页数：5

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