Nonvolatile organic field-effect transistor memory element with a polymeric gate electret

被引：198

作者：

Singh, TB ^{[1
]}

Marjanovic, N ^{[1
]}

Matt, GJ ^{[1
]}

Sariciftci, NS ^{[1
]}

Schwödiauer, R ^{[1
]}

Bauer, S ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Linz Inst Organ Solar Cells, A-4040 Linz, Austria

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 22期

关键词：

D O I：

10.1063/1.1828236

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic field-effect transistors with a polymeric electret as gate insulator and fullerenes as a molecular semiconductor were fabricated. We observed an amplification of the drain-source current I-ds on the order of 10(4) upon applying a gate voltage V-g. Reversing the gate voltage V-g features large metastable hysteresis in the transfer characteristics I-ds (V-g) with a long retention time. The observation of a switchable channel current I-ds is proposed to originate from charge storage in the organic electret. As such, this device is a demonstration of an organic nonvolatile memory element switchable with the gate voltage. (C) 2004 American Institute of Physics.

引用

页码：5409 / 5411

页数：3

共 27 条

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