Formation and relaxation of hydrogen-related defects in the subsurface region of diamond films

被引:5
作者
Hayashi, K
Sekiguchi, T
Okushi, H
机构
[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan
[2] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 98077, Japan
来源
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词
hydrogen; diamond films; metastability; cathodoluminescence;
D O I
10.4028/www.scientific.net/MSF.258-263.745
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the metastability of hydrogen-related defects in hydrogen-plasma-treated diamond films. In the cathodoluminescence spectra, a specific broad peak at around 2.3 eV is observed in the subsurface region of the diamond films treated at 800 degrees C. The peak is not observed in those treated below 500 degrees C; however, it suddenly appears after low-energy (similar to 10 kV) electron beam irradiation. Corresponding to this phenomenon, the irradiation also leads to a decrease in the sheet resistance of the films. These results indicate the existence of a metastable configuration of hydrogen-related defects, which relaxes by the low-energy electron beam irradiation.
引用
收藏
页码:745 / 750
页数:6
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