Electromigration-induced stress in aluminum conductor lines measured by x-ray microdiffraction

被引:119
作者
Wang, PC
Cargill, GS
Noyan, IC
Hu, CK
机构
[1] Columbia Univ, Dept Chem Engn Mat Sci & Min Engn, New York, NY 10027 USA
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
关键词
D O I
10.1063/1.120604
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electromigration-induced stress distributions in 200 mu m long, 10 mu m wide aluminum conductor lines in 1.5 mu m SiO2 passivation layers have been investigated in real time using synchrotron-based white-beam x-ray microdiffraction. The results show that a steady-state linear stress gradient along the length of the line developed within the first few hours of electromigration and that the stress gradient could be manipulated by controlling the magnitude and the direction of the current flow. From the current density dependence of the steady-state stress gradient, the effective valence Z* was determined to be 1.6 at 260 degrees C. From the time dependence of the transient-state stress gradient, the effective grain boundary diffusion coefficient D-eff was estimated to he 8.2 X 10(-11) cm(2)/s at 260 degrees C using Korhonen's stress evolution model [M. A. Korhonen, P. Borgesen, K. N. Tu, and C.-Y. Li, J. Appl. Phys. 73, 3790 (1993)]. Both Z* and D-eff values are in good agreement with the previously reported values. (C) 1998 American Institute of Physics.
引用
收藏
页码:1296 / 1298
页数:3
相关论文
共 24 条
[11]  
d'Heurle F. M., 1978, Thin films. Interdiffusion and reactions, P243
[12]  
HEMMERT RS, 1991, IEEE P INT REL S, V29, P64
[13]   ELECTROMIGRATION IN AL/CU/AL FILMS OBSERVED BY TRANSMISSION ELECTRON-MICROSCOPY [J].
HOROWITZ, SJ ;
BLECH, IA .
MATERIALS SCIENCE AND ENGINEERING, 1972, 10 (03) :169-&
[14]   ELECTROMIGRATION AND STRESS-INDUCED VOIDING IN FINE AL AND AL-ALLOY THIN-FILM LINES [J].
HU, CK ;
RODBELL, KP ;
SULLIVAN, TD ;
LEE, KY ;
BOULDIN, DP .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1995, 39 (04) :465-497
[15]   CURRENT-INDUCED MARKER MOTION IN GOLD WIRES [J].
HUNTINGTON, HB ;
GRONE, AR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (1-2) :76-87
[16]   STRESS-RELAXATION OF PASSIVATED ALUMINUM LINE METALLIZATIONS ON SILICON SUBSTRATES [J].
KORHONEN, MA ;
BLACK, RD ;
LI, CY .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) :1748-1755
[17]   STRESS EVOLUTION DUE TO ELECTROMIGRATION IN CONFINED METAL LINES [J].
KORHONEN, MA ;
BORGESEN, P ;
TU, KN ;
LI, CY .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :3790-3799
[18]   CRITICAL CURRENT-LENGTH PRODUCT FOR ELECTROMIGRATION-INDUCED RESISTANCE CHANGES IN SHORT AL LINES [J].
KRAAYEVELD, JR ;
VERBRUGGEN, AH ;
WILLEMSEN, AWJ ;
RADELAAR, S .
APPLIED PHYSICS LETTERS, 1995, 67 (09) :1226-1228
[19]   HIGH-RESOLUTION DETERMINATION OF THE STRESS IN INDIVIDUAL INTERCONNECT LINES AND THE VARIATION DUE TO ELECTROMIGRATION [J].
MA, Q ;
CHIRAS, S ;
CLARKE, DR ;
SUO, Z .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :1614-1622
[20]   RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMS [J].
ROSENBERG, R ;
BERENBAUM, L .
APPLIED PHYSICS LETTERS, 1968, 12 (05) :201-+