GIXRD of nanoscale strain patterning in wafer bonding

被引：4

作者：

Eymery, J

Leroy, F

Fournel, F

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

[2] Cea Grenoble, Dept Technol Silicium, F-38054 Grenoble, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 200卷

关键词：

grazing incidence X-ray diffraction; dislocation; strain; lateral superlattice; wafer bonding;

D O I：

10.1016/S0168-583X(02)01677-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Synchrotron grazing incidence X-ray diffraction is used to study tuneable lateral dislocation superlattices obtained by Si wafer bonding. Deformation satellites peaks around the {2 2 0} reflections are measure for pure twist and mixed (twist-tilt) grain boundaries. The twist of the two crystals induces a square network of screw dislocations whose features are calculated by continuum elasticity theory and kinematical approximation. The tilt of the crystals is accommodated by alternated mixed dislocations and the interactions between these two networks is discussed from the X-ray diffraction measurements. (C) 2002 Elsevier Science B.V. All rights reserved.

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收藏

页码：73 / 78

页数：6

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