Effects of processing parameters on ultraviolet emission of In-doped ZnO nanodisks grown by carbothermal reduction

被引：14

作者：

Lin, Po-Fan

Ko, Chih-Yuan

Lin, Wen-Tai ^{[1
]}

Lee, C. T.

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

MATERIALS LETTERS | 2007年 / 61卷 / 8-9期

关键词：

ZnO nanodisks; in doping; cooling rate; oxygen partial pressure; carbothermal reduction; UV emission;

D O I：

10.1016/j.matlet.2006.07.126

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effects of cooling rate and oxygen partial pressure in flowing Ar on ultraviolet (UV) emission of In-doped ZnO nanodisks grown by carbothermal reduction at 1000 degrees C were studied. The In doping favored the growth of ZnO nanodisks instead of ZnO nanowires. Air-cooled ZnO nanodisks showed a strong green emission, while furnace cooling in conjunction with introducing O-2, around 1.0%, into flowing Ar during growth significantly enhanced the growth and UV emission of ZnO nanodisks. The causes can be attributed to the reduction of oxygen vacancies and surface defects in ZnO nanodisks. However, higher oxygen partial pressure in flowing Ar resulted in a decrease in the Zn vapor and thus suppressed the growth and UV emission of ZnO nanodisks. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1767 / 1770

页数：4

共 27 条

[1] Semiconductor clusters, nanocrystals, and quantum dots [J].