Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation

被引：141

作者：

Zhao, QT ^{[1
]}

Breuer, U

Rije, E

Lenk, S

Mant, S

机构：

[1] Forschungszentrum Julich, ISGI,IT, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

[3] Forschungszentrum Julich, ZCH, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 06期

关键词：

D O I：

10.1063/1.1863442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Schottky barrier height (SBH) of NiSi on Si(100) was tuned in a controlled manner by the segregation of sulfur (S) to the silicide/silicon interface. S was implanted into silicon prior to silicidation. During subsequent Ni silicidation, the segregation of S at the NiSi/Si inter-face leads to the change of the SBH. The Sl3H of NiSi decreased gradually on n-Si(100) from 0.65 CV to 0.07 eV and increased correspondingly on p-Si(100). (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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