Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution

被引：118

作者：

Holman, Zachary C. ^{[1
]}

Liu, Chin-Yi ^{[1
]}

Kortshagen, Uwe R. ^{[1
]}

机构：

[1] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 07期

关键词：

Nanocrystal; transistor; FET; germanium; silicon; thin film; QUANTUM DOTS; TRANSPORT-PROPERTIES; HYDROGEN; SURFACE; SOLIDS; DESORPTION; SEMICONDUCTORS; TEMPERATURE;

D O I：

10.1021/nl101413d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging. field of semiconductor nanocrystal thin film devices We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0 02 and 0 006 cm(2) V-1 s(-1). respectively Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology

引用

页码：2661 / 2666

页数：6

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