Oxygen related defects in germanium

被引：35

作者：

Clauws, P

机构：

[1] University of Gent, Department of Solid State Sciences, B-9000 Gent

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 36卷 / 1-3期

关键词：

germanium; oxygen; silicon; infrared spectroscopy;

D O I：

10.1016/0921-5107(95)01255-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spectroscopic investigations during the last decade have resulted in a detailed picture of oxygen related defects in germanium such as oxygen interstitials and thermal donors. The results are summarized and compared with those of equivalent centres in silicon. The many similarities suggest that unified models for the major oxygen defects in the two semiconductors may apply.

引用

收藏

页码：213 / 220

页数：8

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