INFRARED PROPERTIES OF 40-60 MEV ELECTRON-IRRADIATED GERMANIUM

被引：13

作者：

BECKER, JF

CORELLI, JC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 11期

关键词：

D O I：

10.1063/1.1703049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3606 / &

共 17 条

[1] ELECTRON PARAMAGNETIC RESONANCE IN IRRADIATED OXYGEN-DOPED GERMANIUM [J].

BALDWIN, JA .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P1) :793-&

[2]

BALKANSKI M, 1963, J PHYS SOC JAPAN S2, V18, P37

[3] NEW INFRARED ABSORPTION BANDS IN P-TYPE GERMANIUM [J].

BRIGGS, HB ;

FLETCHER, RC .

PHYSICAL REVIEW, 1952, 87 (06) :1130-1131

[4] NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON [J].

CORBETT, JW ;

MCDONALD, RS ;

WATKINS, GD .

PHYSICAL REVIEW, 1964, 135 (5A) :1381-+

[5] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].

CORBETT, JW ;

WATKINS, GD ;

CHRENKO, RM ;

MCDONALD, RS .

PHYSICAL REVIEW, 1961, 121 (04) :1015-&

[6] ANNEALING OF INFRARED DEFECT ABSORPTION BANDS IN 40-MEV ELECTRON-IRRADIATED SILICON [J].

CORELLI, JC ;

OEHLER, G ;

BECKER, JF ;

EISENTRA.KJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1787-&

[7] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].

FAN, HY ;

RAMDAS, AK .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1127-1134

[8]

FAN HY, 1960, 1960 P INT C SEM PHY, P309

[9]

GAERTTNER M, 1965, THESIS RPI

[10] INFRARED ABSORPTION IN P-TYPE GERMANIUM [J].

KAISER, W ;

COLLINS, RJ ;

FAN, HY .

PHYSICAL REVIEW, 1953, 91 (06) :1380-1381

← 1 2 →