Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution

被引：118

作者：

Holman, Zachary C. ^{[1
]}

Liu, Chin-Yi ^{[1
]}

Kortshagen, Uwe R. ^{[1
]}

机构：

[1] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 07期

关键词：

Nanocrystal; transistor; FET; germanium; silicon; thin film; QUANTUM DOTS; TRANSPORT-PROPERTIES; HYDROGEN; SURFACE; SOLIDS; DESORPTION; SEMICONDUCTORS; TEMPERATURE;

D O I：

10.1021/nl101413d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging. field of semiconductor nanocrystal thin film devices We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0 02 and 0 006 cm(2) V-1 s(-1). respectively Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology

引用

页码：2661 / 2666

页数：6

共 39 条

[21] REVIEW OF GERMANIUM SURFACE PHENOMENA [J].

KINGSTON, RH .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) :101-114

[22] Modeling of particulate coagulation in low pressure plasmas [J].

Kortshagen, U ;

Bhandarkar, U .

PHYSICAL REVIEW E, 1999, 60 (01) :887-898

[23] Structural, optical, and electrical properties of PbSe nanocrystal solids treated thermally or with simple amines [J].

Law, Matt ;

Luther, Joseph M. ;

Song, Oing ;

Hughes, Barbara K. ;

Perkins, Craig L. ;

Nozik, Arthur J. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (18) :5974-5985

[24] High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition [J].

Lee, CH ;

Sazonov, A ;

Nathan, A .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

[25] Preparation and characterisation of luminescent alkylated-silicon quantum dots [J].

Lie, LH ;

Duerdin, M ;

Tuite, EM ;

Houlton, A ;

Horrocks, BR .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2002, 538 :183-190

[26] Hybrid Solar Cells from P3HT and Silicon Nanocrystals [J].

Liu, Chin-Y ;

Holman, Zachary C. ;

Kortshagen, Uwe R. .

NANO LETTERS, 2009, 9 (01) :449-452

[27] High-yield plasma synthesis of luminescent silicon nanocrystals [J].

Mangolini, L ;

Thimsen, E ;

Kortshagen, U .

NANO LETTERS, 2005, 5 (04) :655-659

[28] All-inorganic field effect transistors fabricated by printing [J].

Ridley, BA ;

Nivi, B ;

Jacobson, JM .

SCIENCE, 1999, 286 (5440) :746-749

[29] Coulomb blockade and hopping conduction in PbSe quantum dots [J].

Romero, HE ;

Drndic, M .

PHYSICAL REVIEW LETTERS, 2005, 95 (15)

[30] Solution-processed silicon films and transistors [J].

Shimoda, T ;

Matsuki, Y ;

Furusawa, M ;

Aoki, T ;

Yudasaka, I ;

Tanaka, H ;

Iwasawa, H ;

Wang, DH ;

Miyasaka, M ;

Takeuchi, Y .

NATURE, 2006, 440 (7085) :783-786

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