Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer

被引：13

作者：

Ma, YT ^{[1
]}

Liu, LT

Yu, ZP

Li, ZJ

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

[2] Stanford Univ, Integrated Circuits Lab, Stanford, CA 94305 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 09期

关键词：

MOS; Schrodinger equations; triangular potential; well approximation;

D O I：

10.1109/16.861589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two methods are presented to calculate the carrier distribution in MOS inversion and accumulation layer by self-consistent solution of Schrodinger and Poisson equations, One is the fully numerical solution of Schrodinger equation by finite difference method and the other is the analytical solution of Schrodinger equation under triangular potential well approximation. The effective electric field used in the analytical solution is properly determined, Results show that both carrier sheet density and surface potential in inversion layer and accumulation layer can be determined by analytical solution under triangular potential well approximation with sufficiently high accuracy. However, the carrier distribution profile and centroid of mobile charge layer as well as the behavior at the nat-band region, have a large deviation from the numerical results.

引用

页码：1764 / 1767

页数：4

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