Parallax measurements of integrated circuit interconnects using a scanning transmission electron microscope

被引：6

作者：

Levine, ZH ^{[1
]}

Gao, JJ

Neogi, S

Levin, TM

Scott, JH

Grantham, S

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Montgomery Blair High Sch, Silver Spring, MD 20901 USA

[3] Intel Corp, Q&R Failure Anal, Desktop Platforms Grp, Hillsboro, OR 97124 USA

[4] IBM Corp, Microelect Div, Essex Jct, VT 05452 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.1538336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 300 keV scanning transmission electron microscope was used to obtain tilt-series images of two two-level copper integrated circuit samples. The center-to-center layer spacing obtained from the tilt series showed internal consistency at the level of 15%, and external validity at the level of 20%. (C) 2003 American Institute of Physics.

引用

页码：2193 / 2197

页数：5

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