High purity InxGa1-xSb single crystals with cutoff wavelength of 7-8 μm grown by melt epitaxy

被引：6

作者：

Gao, YZ

Kan, H

Murata, JI

Aoyama, M

Yamaguchi, T

机构：

[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

[2] Hamamatsu Photon KK, Cent Res Lab, Hamakita 434, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 10期

关键词：

InGaSb; melt epitaxy; single crystal; high purity;

D O I：

10.1007/s11664-000-0029-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, InGaSb single crystals with a cutoff wavelength of 7-8 mu m were successfully grown on GaAs substrates by a new growth technique named melt epitaxy. The band gap of InGaSb layers obviously narrowed compared with those with the same compositions grown by ordinary methods and the longest cutoff wavelength reached 8.3 mu m. High electron mobility of 8.05 x 10(4) cm(2)/Vs and low carrier density of 1 x 10(15) cm(-3) at 77 K were obtained indicating high purity of InGaSb epilayers.

引用

页码：L25 / L27

页数：3

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