Low-threshold quasi-cw type-II quantum well lasers at wavelengths beyond 4 mu m

被引：13

作者：

Lin, CH

Pei, SS

Le, HQ

Meyer, JR

Felix, CL

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[2] USN,RES LAB,DIV OPT SCI,WASHINGTON,DC 20375

[3] APPL OPTOELECT INC,HOUSTON,TX 77081

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 22期

关键词：

D O I：

10.1063/1.120313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optically pumped InAs/InGaSb/InAs/AlSb type-II quantum well lasers emitting from 4.1 to 4.36 mu m were operated up to 226 K with a characteristic temperature T-0 of 30 K. The absorbed threshold pump intensity at 0.98 mu m was 0.12 kW/cm(2) at 100 K, and 3.25 kW/cm(2) at 200 K with a pulse length of 5 mu s and a repetition rate of 2 kHz. At 73 K, the peak output power was 250 mW per facet with a pulse length of 10 mu s and a repetition rate of 10 kHz. A cw output power of 14.7 mW was observed at 74 K. (C) 1997 American Institute of Physics.

引用

收藏

页码：3281 / 3283

页数：3

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