Molecular beam epitaxy and optical properties of ZnCdS/ZnMgS quantum wells on GaP

被引:10
作者
Ichino, K [1 ]
Kariya, H [1 ]
Suzuki, N [1 ]
Ueyama, K [1 ]
Kitagawa, M [1 ]
Kobayashi, H [1 ]
机构
[1] Tottori Univ, Dept Elect & Elect Engn, Tottori 6808552, Japan
基金
日本学术振兴会;
关键词
ZnS; ZnCdS; ZnMgS; quantum well; PL; MBE;
D O I
10.1016/S0022-0248(00)00050-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We report the growth of ZnCdS/ZnMgS quantum wells (QWs) and their optical properties. The constituent alloy layers were grown by molecular beam epitaxy under a large S flux and a high substrate temperature. The layers exhibit high quality in terms of double crystal X-ray rocking curve and optical spectra including photoluminescence (PL), PL excitation and reflection spectra. The ZnCdS/ZnMgS QWs exhibit strong emission from the ZnCdS well(s) through photo-excitation at the ZnMgS barriers. By changing the growth condition of the QW structures, PL line width can be reduced. Such QWs show PL up to room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:135 / 139
页数:5
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