PZT films grown by RF sputtering at high oxygen pressure

被引：12

作者：

Blanco, O ^{[1
]}

Heiras, J

Siqueiros, JM

Martínez, E

Castellanos-Guzmán, AG

机构：

[1] Univ Nacl Autonoma Mexico, CICESE, CCMC, Mexico City, DF, Mexico

[2] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Ensenada 22800, Baja California, Mexico

[3] CUCEI U G, Ctr Invest Mat, Mexico City, DF, Mexico

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2003年 / 22卷 / 06期

关键词：

D O I：

10.1023/A:1022915812773

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of lead zirconate-titanate (PZT) thin films by RF sputtering at high oxygen pressure was reported. The films were deposited on SrTiO3 and silicon substrates. The films grown were fully oxygenated and Pb composition gradient through the film thickness was small. It was found that the structural characteristics, root mean square (RMS) toughness, grain size distribution and ferroelectrics properties depended on the deposition conditions.

引用

页码：449 / 453

页数：5

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