PZT films grown by RF sputtering at high oxygen pressure

被引：12

作者：

Blanco, O ^{[1
]}

Heiras, J

Siqueiros, JM

Martínez, E

Castellanos-Guzmán, AG

机构：

[1] Univ Nacl Autonoma Mexico, CICESE, CCMC, Mexico City, DF, Mexico

[2] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Ensenada 22800, Baja California, Mexico

[3] CUCEI U G, Ctr Invest Mat, Mexico City, DF, Mexico

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2003年 / 22卷 / 06期

关键词：

D O I：

10.1023/A:1022915812773

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of lead zirconate-titanate (PZT) thin films by RF sputtering at high oxygen pressure was reported. The films were deposited on SrTiO3 and silicon substrates. The films grown were fully oxygenated and Pb composition gradient through the film thickness was small. It was found that the structural characteristics, root mean square (RMS) toughness, grain size distribution and ferroelectrics properties depended on the deposition conditions.

引用

页码：449 / 453

页数：5

共 20 条

[11] Oxygen plasma effects on sol-gel-derived lead-zirconate-titanate thin films [J].

Jang, HK ;

Lee, SK ;

Lee, CE ;

Noh, SJ ;

Lee, WI .

APPLIED PHYSICS LETTERS, 2000, 76 (07) :882-884

[12]

Lakeman C. D. E., 1994, Ferroelectrics, V152, P145, DOI 10.1080/00150199408017611

[13] Orientation control and electrical properties of sputtered Pb(Zr,Ti)O3 films [J].

Lee, JY ;

Lee, BS .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 79 (01) :86-89

[14] Mechanism of the rf sputtering of mixed oxides [J].

Mukhortov, VM ;

Tolmachev, GN ;

Golovko, YI ;

Mashchenko, AI .

TECHNICAL PHYSICS, 1998, 43 (09) :1097-1101

[15] Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films [J].

Nagarajan, V ;

Jenkins, IG ;

Alpay, SP ;

Li, H ;

Aggarwal, S ;

Salamanca-Riba, L ;

Roytburd, AL ;

Ramesh, R .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :595-602

[16]

POPPE U, 1998, SOLID STATE COMMUN, V76, P677

[17] Structure and device characteristics of SrBi2Ta2O9-based nonvolatile random-access memories [J].

Scott, JF ;

Ross, FM ;

deAraujo, CAP ;

Scott, MC ;

Huffman, M .

MRS BULLETIN, 1996, 21 (07) :33-39

[18] Ferroelectricity in thin perovskite films [J].

Tybell, T ;

Ahn, CH ;

Triscone, JM .

APPLIED PHYSICS LETTERS, 1999, 75 (06) :856-858

[19] Electrical properties of sputtered PZT films on stabilized platinum electrode [J].

Vèlu, G ;

Rèmiens, D .

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1999, 19 (11) :2005-2013

[20] Nucleation and growth behavior of epitaxial Pb(Zr,Ti)O3/MgO(100) observed by atomic force microscopy [J].

Wakiya, N ;

Kuroyanagi, K ;

Xuan, Y ;

Shinozaki, K ;

Mizutani, N .

THIN SOLID FILMS, 1999, 357 (02) :166-172

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