Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoate

被引：246

作者：

Ling, QD

Song, Y

Ding, SJ

Zhu, CX

Chan, DSH

Kwong, DL

Kang, ET

Neoh, KG

机构：

[1] Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 119260, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, SNDL, Singapore 119260, Singapore

[3] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

ADVANCED MATERIALS | 2005年 / 17卷 / 04期

关键词：

D O I：

10.1002/adma.200401048

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A polymer-memory device based on a copolymer containing carbazole (donor) and Eu-complex (acceptor) groups in a metal/insulator/metal architecture is described. The nonvolatile device has two distinctive bistable conductivity states, and exhibits a high ON/OFF current ratio, a fast response time, and acceptable retention under ambient conditions. Application of a potential sets the device to the high-conductivity ON state by generating holes (see Figure).

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页码：455 / +

页数：6

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