Vibrational analysis of oxygen-plasma treated indium tin oxide

被引:17
作者
He, P
Wang, SD
Wong, WK
Cheng, LF
Lee, CS
Lee, ST [1 ]
Liu, SY
机构
[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China
[3] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
[4] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1016/S0009-2614(03)00177-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-resolution electron-energy-loss spectroscopy (HREELS) showed that the dominant feature in the HREELS spectrum of the 'as-received' ITO was the loss peaks associated with the CHx group. Oxygen-plasma treatment of ITO led to the disappearance of the CHx loss peaks, and a concomitant increase in the intensity of the phonon peaks at 71 and 134 meV. The result indicates the removal of the CHx group and additional oxidation of the ITO surface by the oxygen-plasma treatment. Both processes are proposed to be responsible for the increase in work function of ITO by the oxygen-plasma treatment. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:795 / 798
页数:4
相关论文
共 12 条
[1]   Work function changes and surface chemistry of oxygen, hydrogen, and carbon on indium tin oxide [J].
Chaney, JA ;
Pehrsson, PE .
APPLIED SURFACE SCIENCE, 2001, 180 (3-4) :214-226
[2]   Vibrational and photoemission study of the interface between phenyl diamine and indium tin oxide [J].
He, P ;
Wang, SD ;
Wong, WK ;
Lee, CS ;
Lee, ST .
APPLIED PHYSICS LETTERS, 2001, 79 (10) :1561-1563
[3]   Vibrational analysis of the (Cs+CO)-(2x2) compound layer on Ru(0001) [J].
He, P ;
Xu, Y ;
Jacobi, K .
JOURNAL OF CHEMICAL PHYSICS, 1996, 104 (20) :8118-8125
[4]  
Ibach H., 1982, ELECT ENERGY LOSS SP
[5]   Improvement of organic electroluminescent device performance by in situ plasma treatment of indium-tin-oxide surface [J].
Ishii, M ;
Mori, T ;
Fujikawa, H ;
Tokito, S ;
Taga, Y .
JOURNAL OF LUMINESCENCE, 2000, 87-9 (87) :1165-1167
[6]   Indium-tin oxide treatments for single- and double-layer polymeric light-emitting diodes: The relation between the anode physical, chemical, and morphological properties and the device performance [J].
Kim, JS ;
Granstrom, M ;
Friend, RH ;
Johansson, N ;
Salaneck, WR ;
Daik, R ;
Feast, WJ ;
Cacialli, F .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) :6859-6870
[7]   Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices [J].
Mason, MG ;
Hung, LS ;
Tang, CW ;
Lee, ST ;
Wong, KW ;
Wang, M .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1688-1692
[8]   Surface oxidation activates indium tin oxide for hole injection [J].
Milliron, DJ ;
Hill, IG ;
Shen, C ;
Kahn, A ;
Schwartz, J .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :572-576
[9]  
Nüesch F, 1999, APPL PHYS LETT, V74, P880, DOI 10.1063/1.123397
[10]   Reduced operating voltage of organic electroluminescent devices by plasma treatment of the indium tin oxide anode [J].
Steuber, F ;
Staudigel, J ;
Stössel, M ;
Simmerer, J ;
Winnacker, A .
APPLIED PHYSICS LETTERS, 1999, 74 (23) :3558-3560