High-Performance Top-Gated Graphene-Nanoribbon Transistors Using Zirconium Oxide Nanowires as High-Dielectric-Constant Gate Dielectrics

被引：127

作者：

Liao, Lei ^{[2
]}

Bai, Jingwei ^{[1
]}

Lin, Yung-Chen ^{[1
]}

Qu, Yongquan ^{[2
]}

Huang, Yu ^{[1
,3
]}

Duan, Xiangfeng ^{[2
,3
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

[3] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 17期

关键词：

STACK; GAS;

D O I：

10.1002/adma.200904415

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new strategy for integrating high-dielectric-constant (high-k) dielectrics with graphene nanoribbon (GNR) is presented. Freestanding zirconium oxide nanowires are synthesized and subsequently assembled on top of GNRs as high-k gate dielectrics for top-gated GNR transistors with unprecedented performance. [GRAPHICS] .

引用

页码：1941 / +

页数：6

共 36 条

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