Preparation and characteristics of p-type ZnO films by DC reactive magnetron sputtering

被引：96

作者：

Ye, ZZ ^{[1
]}

Lu, JG ^{[1
]}

Chen, HH ^{[1
]}

Zhang, YZ ^{[1
]}

Wang, L ^{[1
]}

Zhao, BH ^{[1
]}

Huang, JY ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 253卷 / 1-4期

关键词：

p-type conduction; doping; DC magnetron reactive sputtering; zinc compounds; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(03)01007-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

P-type ZnO films with c-axis orientation deposited by DC reactive magnetron sputtering are first reported in this paper. ZnO films were prepared in NH3-O-2 atmosphere (ammonia concentration varied from 0% to 67%) with the substrate temperature in the range of 400-550degreesC. The properties were examined by X-ray diffraction, atomic force microscopy, Hall measurement, spreading resistance processing and optical transmission spectra. Results showed that excess zinc and interstitial hydrogen play important roles in the doping process. The N-doped ZnO film deposited on alpha-Al2O3 (0 0 0 1) at a substrate temperature of 500degreesC and an ammonia concentration of 50% showed p-type conduction with good electrical properties. A carrier density of 3.2 x 10(17)cm(-3) and resistivity of 35 Omega cm were observed. The p-type ZnO films possess a transmittance of about 90% in the visible region and a band gap of 3.21 eV at room temperature. In addition, ZnO p-n homojunctions on p-Si(1 0 0) substrate (p-ZnO:N/n-ZnO/p-Si) have also been first achieved, which could further open the door for practical applications in diverse optical devices. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：258 / 264

页数：7

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