In situ STXM investigations of pentacene-based OFETs during operation

被引：25

作者：

Hub, C. ^{[1
,2
]}

Burkhardt, M. ^{[3
]}

Halik, M. ^{[3
]}

Tzvetkov, G. ^{[1
,2
,4
]}

Fink, R. ^{[1
,2
]}

机构：

[1] Univ Erlangen Nurnberg, Dept Chem & Pharm, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, ICMM, D-91058 Erlangen, Germany

[3] Univ Erlangen Nurnberg, Inst Polymer Mat, D-91058 Erlangen, Germany

[4] Univ Sofia, Dept Inorgan Chem, Sofia 1164, Bulgaria

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2010年 / 20卷 / 23期

关键词：

THIN-FILM TRANSISTORS; ELECTRONIC TRANSPORT; FIELD; CRYSTALS; DEVICES; GROWTH;

D O I：

10.1039/c0jm00423e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ultrathin pentacene-based organic field-effect transistors (OFETs) on commercially available silicon nitride membranes suitable for transmission X-ray experiments are demonstrated. The devices produced by high-vacuum deposition show excellent electronic performance (mu = 0.6 cm(2) V(-1) s(-1), I(on/off) = 10(6)). STXM-experiments recorded with the PolLux microspectroscope correlate structural and electronic properties at highest spatial and spectral resolution while the OFET is operated. Local NEXAFS spectra are used to analyze the different orientations of the pentacene nanocrystals. Spectral changes due to modifications in the electronic structure during OFET operation can hardly be detected with the current setup.

引用

页码：4884 / 4887

页数：4

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