Rationale and challenges for optical interconnects to electronic chips

被引:944
作者
Miller, DAB [1 ]
机构
[1] Stanford Univ, Ginzton Lab, Stanford, CA 94305 USA
关键词
off-chip wiring; on-chip wiring; optical interconnects; quantum-well modulator; vertical-cavity surface-emitting laser;
D O I
10.1109/5.867687
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The various arguments for introducing optical interconnections to silicon CMOS chips are summarized, and the challenges for optical, optoelectronic, and integration technologies are discussed. Optics could solve many physical problems of interconnects, including precise clock distribution, system synchronization (allowing larger synchronous zones, both on-chip and between chips), bandwidth and density of long interconnections, and reduction of power dissipation. Optics may relieve a broad range of design problems, such as crosstalk, voltage isolation, wave reflection, impedance matching, and pin inductance. It may allow continued scaling of existing architectures and enable novel highly interconnected or high-bandwidth architectures. No physical breakthrough is required to implement dense optical interconnects to silicon chips, though substantial technological work remains. Cost is a significant ban iel to practical introduction, though revolutionary approaches exist that might achieve economies of scale. An Appendix analyzes scaling of on-chip global electrical interconnects, including line inductance and the skin effect, both of which impose significant additional constraints on future interconnects.
引用
收藏
页码:728 / 749
页数:22
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