Embedded front-end for charge amplifier configuration with sub-threshold MOSFET continuous reset

被引：12

作者：

Guazzoni, C

Sampietro, M

Fazzi, A

Lechner, P

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Politecn Milan, Dipartimento Ingn Nucl CESNEF, I-20133 Milan, Italy

[3] KETEK GMBH, D-81739 Munich, Germany

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 04期

关键词：

D O I：

10.1109/23.872993

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper reports the considerations necessary to design state-of the art front-end electronic devices integrated on silicon X-ray detectors to perform functional charge amplification. In particular it concentrates on the characteristics of a MOSFET feedback device operated in subthreshold mode to perform a continuous reset of the feedback capacitance with minimum added noise and maximum linearity. Details of the external microelectronic circuitry that complements the front-end devices are also given. The designed two-chip system aims to reach very high stability in charge-to-voltage conversion and to fulfill the requirements of the most advances X-ray spectroscopy experiments.

引用

页码：1442 / 1446

页数：5

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