Diffusion barrier characteristics of Hf(C,N) thin films deposited by plasma enhanced metal organic chemical vapor deposition for Cu metallization

被引：10

作者：

Roh, WC ^{[1
]}

Jung, DJ ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 4A期

关键词：

Cu metallization; diffusion barrier; Hf(C; N); plasma enhanced metal organic chemical vapor deposition;

D O I：

10.1143/JJAP.37.L406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diffusion barrier characteristics of Hf(C,N) thin films for Cu metallization was investigated. Hf(C,N) thin films were deposited on Si(100) substrates by pulsed D.C. plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) using tetrakis diethyl amido hafnium (Hf[N(C2H5)(2)](4):TDEAHf) and N-2 as precursors. X-ny diffraction analyses, sheet resistance measurements and Rutherford backscattering spectroscopy analyses revealed that Hf(C,N) films prevent diffusion of Cu fairly well up to 600 degrees C. At 700 degrees C, however, Hf(C,N) films allowed a significant diffusion of Cu into the Si substrate.

引用

页码：L406 / L408

页数：3

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