Radiation hardening of power MOSFETs using electrical stress

被引：23

作者：

Picard, C ^{[1
]}

Brisset, C

Quittard, O

Hoffmann, A

Joffre, F

Charles, JP

机构：

[1] CEA Saclay, LETI, F-91191 Gif Sur Yvette, France

[2] Supelec, Ctr Lorrain Opt & Elect Solides, F-57070 Metz, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 03期

关键词：

D O I：

10.1109/23.856492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Application of high voltage electrical stresses to NVDMOSFET-type COTS transistors was explored as an original hardening option. Such pre-irradiation treatment enhances transistor response to total dose.

引用

页码：641 / 646

页数：6

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