Analysis of the processes in power MOSFETs during gamma-ray irradiation and subsequent thermal annealing

被引：8

作者：

Jaksic, A

Ristic, G

Pejovic, M

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1996年 / 155卷 / 02期

关键词：

D O I：

10.1002/pssa.2211550210

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The processes in n-channel power MOSFETs during gamma-ray irradiation and subsequent annealing at elevated temperature are investigated. The creation of positive oxide-trap charge dominates during irradiation, leading to a negative threshold voltage shift. The so-called 'latent' interface-trap buildup, observed during annealing, is identified as the main contributor to the threshold voltage rebound. At very late annealing times, a significant decrease in the number of interface traps occurs. Possible mechanisms for the observed effects, as well as their implications for hardness assurance are discussed.

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页码：371 / 379

页数：9

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