THE ROLE OF INTERFACE TRAPS IN REBOUND MECHANISMS

被引:3
作者
GOLUBOVIC, S
RISTIC, G
PEJOVIC, M
DIMITRIJEV, S
机构
[1] Division of Science and Technology, School of Microelectronic Engineering, Griffith University, Brisbane, Queensland, 4111, Nathan
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1994年 / 143卷 / 02期
关键词
Interface traps - Rebound mechanisms;
D O I
10.1002/pssa.2211430217
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Postirradiation effect measurements on NMOS Al-gate transistors are performed. Rebound failures are demonstrated during the bias-thermal annealing. It is established that the interface traps, created during irradiation, are responsible for rebound.
引用
收藏
页码:333 / 339
页数:7
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