2-REACTION MODEL OF INTERFACE TRAP ANNEALING

被引：13

作者：

REED, ML

PLUMMER, JD

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334578

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1198 / 1202

页数：5

共 18 条

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[9] THERMAL BLEACHING OF X-RAY-INDUCED DEFECT CENTERS IN HIGH-PURITY FUSED-SILICA BY DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN [J].

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[10] DIFFUSION OF RADIOLYTIC MOLECULAR-HYDROGEN AS A MECHANISM FOR THE POST-IRRADIATION BUILDUP OF INTERFACE STATES IN SIO2-ON-SI STRUCTURES [J].

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