180 nm metal gate, high-k dielectric, implant-free III-V MOSFETs with transconductance of over 425 μS/μm

被引：6

作者：

Hill, R. J. W.

Moran, D. A. J.

Li, X.

Zhou, H.

Macintyre, D.

Thoms, S.

Droopad, R.

Passlack, M.

Thayne, I. G.

机构：

[1] Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland

[2] Freescale Semicond Inc, Tempe, AZ 85284 USA

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1049/el:20070427

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data is reported from 180 mn gate length GaAs n-MOSFETs with drive current (I-ds,I-sat) of 386 mu A/mu m (V-g=V-d=1.5 V), extrinsic transconductance (g(m)) of 426 mu S/mu m, gate leakage (j(g,limit)) of 44 nA/cm(2), and on resistance (R-on) of 1640 Omega mu m. The g(m) and R-on metrics are the best values reported to date for III-V MOSFETs, and indicate their potential for scaling to deca-nanometre dimensions.

引用

页码：543 / 545

页数：3

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