Stacking, polarization control, and lasing (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots

被引：12

作者：

Anantathanasarn, S. ^{[1
]}

Notzel, R. ^{[1
]}

van Veldhoven, P. J. ^{[1
]}

van Otten, F. W. M. ^{[1
]}

Eijkemans, T. J. ^{[1
]}

Barbarin, Y. ^{[1
]}

de Vries, T. ^{[1
]}

Smalbrugge, E. ^{[1
]}

Geluk, E. J. ^{[1
]}

Bente, Eatm. ^{[1
]}

Oei, Y. S. ^{[1
]}

Smit, M. K. ^{[1
]}

Wolter, J. H. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, eiTT, COBRA, Interuniv Res Inst Commun Technol, NL-5600 MB Eindhoven, Netherlands

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / SPEC. ISS期

关键词：

quantum dot; metalorganic vapor-phase epitaxy; InAs; InGaAsP; B1; InP (100); laser diodes;

D O I：

10.1016/j.jcrysgro.2006.10.173

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth, device fabrication, and performance of stacked InAs/InGaAsP/InP (10 0) quantum dots (QDs) in telecom lasers. Wavelength tuning of the QDs grown by metalorganic vapor-phase epitaxy (MOVPE) over the 1.55-mu m region at room temperature (RT) is achieved using ultrathin GaAs interlayers underneath the QDs, which suppress As/P exchange to reduce the QD height in a controlled way. Unpolarized photoluminescence from the cleaved side, important for realization of polarization-insensitive semiconductor optical amplifiers, is obtained for closely stacked QDs due to vertical electronic coupling. The wavelength shift due to group-V-atom intermixing in the QDs during growth at higher temperatures of device structures is compensated by adjusting the GaAs interlayer thickness and V/III flow ratio during QD growth. Device quality of the QDs is highlighted by continuous-wave ground-state lasing at RT of narrow ridge-waveguide QD lasers. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：553 / 557

页数：5

共 11 条

[1] Wavelength-tunable (1.55-μm region) InAs quantum dots in InGaAsP/InP (100) grown by metal-organic vapor-phase epitaxy -: art. no. 013503 [J].