Czochralski growth of bulk crystals of Ge1-xSix alloys

被引：47

作者：

Matsui, A ^{[1
]}

Yonenaga, I ^{[1
]}

Sumino, M ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 98077, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 183卷 / 1-2期

关键词：

GeSi; alloy semiconductor; czochralski growth; solute segregation; gravity effect;

D O I：

10.1016/S0022-0248(97)00405-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Bulk crystals of Ge1-xSix alloys in the composition range of 0 < x < 0.89 were grown by the Czochralski method. Fully or partly grown single crystals were obtained, depending on the melt composition. The compositions of grown crystals were determined by means of energy dispersive X-ray (EDX) spectroscopy and grown-in defects were observed by etch pit and X-ray topographic techniques. The variations of the compositions along the growth direction in the crystals were discussed. The gravity effect in the melt caused by a large difference in the densities of Ge and Si was deduced.

引用

页码：109 / 116

页数：8

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