Gate dielectric formation and MIS interface characterization on Ge

被引：106

作者：

Takagi, S.

Maeda, T.

Taoka, N.

Nishizawa, M.

Morita, Y.

Ikeda, K.

Yamashita, Y.

Nishikawa, M.

Kumagai, H.

Nakane, R.

Sugahara, S.

Sugiyama, N.

机构：

[1] MIRAI AIST, Tsukuba, Ibaraki 3058562, Japan

[2] Univ Tokyo, Tokyo, Japan

[3] MIRAI, ASET, Kawasaki, Kanagawa, Japan

[4] Tokyo Inst Technol, Yokohama, Kanagawa 227, Japan

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期

关键词：

Ge; MISFET; interface state; oxidation; nitridation;

D O I：

10.1016/j.mee.2007.04.129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Appropriate Ge surface control and resulting formation of Ge MIS interfaces with superior interface properties are one of the most critical issues in realizing high performance Ge MISFETs. This paper reviews our recent results on the physical and electrical properties of Ge MIS interfaces fabricated by direct oxidation and nitridation of Ge surfaces, which are expected to form the interface control layers to reduce the density of interface defects and to provide high carrier mobility. The results on gate stacks composing of HfO2 and the nitrided Ge surfaces are also addressed.

引用

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页码：2314 / 2319

页数：6

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