An over 10-Gb/s transmission experiment using a p-type delta-doped InGaAs-GaAs quantum-well vertical-cavity surface-emitting laser

被引：26

作者：

Hatori, N ^{[1
]}

Mizutani, A ^{[1
]}

Nishiyama, N ^{[1
]}

Matsutani, A ^{[1
]}

Sakaguchi, T ^{[1
]}

Motomura, F ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 02期

关键词：

carbon doping; delta doping quantum-well lasers; optical interconnects; semiconductor lasers; surface-emitting lasers;

D O I：

10.1109/68.655355

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated a p-type delta-doped InGaAs-GaAs quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) with a low-resistance GaAs-AlAs distributed Bragg reflector (DBR), The threshold was as low as 700 mu A for 10 x 10 mu m(2) devices, A penalty-free 10-Gb/s transmission experiment with a 100-m-long multimode fiber was performed using fabricated VCSEL's, The modulation speed was up to 12 Gb/s, which was limited by an RC constant, Further threshold reduction and high-speed operation can be expected by controlling the doping concentration in p-type delta-doped layers.

引用

页码：194 / 196

页数：3

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