Correlation of scanning thermal microscopy and near-field cathodoluminescence analyses on a blue GaN light emitting device

被引：5

作者：

Heiderhoff, R

Palaniappan, M

Phang, JCH

Balk, LJ

机构：

[1] Berg Univ Wuppertal, Fachbereich Elektrotechn & Informationstechn, Lehrstuhl Elekt, LFE, D-42097 Wuppertal, Germany

[2] Natl Univ Singapore, Fac Engn, CICFAR, Singapore 119260, Singapore

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 8-10期

关键词：

D O I：

10.1016/S0026-2714(00)00154-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A scanning near-field thermal microscope and a scanning electron microscope/scanning near-field optical microscope hybrid system for near-field cathodoluminescence investigations were used to characterize blue GaN LEDs. Optoelectronic, electronic and thermal device properties are determinable with highest resolution. These results provide an interesting perspective with respect to failure analyses and reliability of the devices. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1383 / 1388

页数：6

共 13 条

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