Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

被引：66

作者：

Wang, RX ^{[1
]}

Beling, CD ^{[1
]}

Fung, S ^{[1
]}

Djurisic, AB ^{[1
]}

Ling, CC ^{[1
]}

Li, S ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 03期

关键词：

D O I：

10.1063/1.1834984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In. (C) 2005 American Institute of Physics.

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页数：5

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