Broad-band wavelength conversion based on cross-gain modulation and four-wave mixing in InAs-InP quantum-dash semiconductor optical amplifiers operating at 1550 nm
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Bilenca, A
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Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, IsraelTechnion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
Bilenca, A
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Alizon, R
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机构:Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
Alizon, R
Mikhelashhvili, V
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机构:Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
Mikhelashhvili, V
Dahan, D
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机构:Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
Dahan, D
Eisenstein, G
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机构:Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
Eisenstein, G
Schwertberger, R
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机构:Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
Schwertberger, R
Gold, D
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机构:Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
Gold, D
Reithmaier, JP
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机构:Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
Reithmaier, JP
Forchel, A
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机构:Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
Forchel, A
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[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
Wavelength conversion based on four-wave mixing (FWM) and cross-gain modulation (XGM) is experimentally demonstrated for the first time in a 1550-nm InAs-InP quantum-dash semiconductor optical amplifier. Continuous-wave FWM with a symmetric conversion efficiency dependence on detuning direction and FWM mediated short-pulse wavelength conversion are demonstrated. Using XGM, we have successfully implemented short-pulse wavelength conversion over 10 THz and error-free data conversion of a 2.5-Gb/s data sequence over 7.5 THz. The pulsed XGM experiments suggest that adjacent regions within an inhomogeneously broadened gain spectrum are partially coupled which increases the operational bandwidth, but at the expense of speed.