Group III nitride-based UV light emitting devices

被引：14

作者：

Amano, H ^{[1
]}

Takanami, S ^{[1
]}

Iwaya, M ^{[1
]}

Kamiyama, S ^{[1
]}

Akasaki, I ^{[1
]}

机构：

[1] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2003年 / 195卷 / 03期

关键词：

D O I：

10.1002/pssa.200306141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the non-radiative recombination center at or around the dislocations on the performance of the AlGaN-based UV light emitting diode (LED) is discussed. For high-efficiency emission, it is necessary to reduce the density of dislocations to less than 5 x 10(7) cm(-2).

引用

页码：491 / 495

页数：5

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