Fully Transparent Pixel Circuits Driven by Random Network Carbon Nanotube Transistor Circuitry

被引：58

作者：

Kim, Sunkook ^{[1
,2
,3
]}

Kim, Seongmin ^{[1
,2
]}

Park, Jongsun ^{[4
]}

Ju, Sanghyun ^{[5
]}

Mohammadi, Saeed ^{[1
,2
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Samsung Adv Inst Technol, Yongin 446712, Gyeonggi Do, South Korea

[4] Korea Univ, Sch Elect & Comp Engn, Seoul 131701, South Korea

[5] Kyonggi Univ, Dept Phys, Suwon 443760, Kyonggi Do, South Korea

来源：

ACS NANO | 2010年 / 4卷 / 06期

基金：

美国国家科学基金会;

关键词：

carbon nanotube; transparent; thin-film transistor; network nanotube; driving circuit; pixel; OLED; THIN-FILM TRANSISTORS; ELECTRODES; ARRAYS;

D O I：

10.1021/nn1006094

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Optically transparent and mechanically flexible thin-film transistors have recently attracted attention for next generation transparent display technologies. Driving and switching transistors for transparent displays have challenging requirements such as high optical transparency, large-scale integration, suitable drive current (I-on) in the microampere range, high on/off current ratio (I-on/I-off), high field-effect mobility, and uniform threshold voltage (V-th). In this study, we demonstrate fully transparent high-performance and high-yield thin-film transistors based on random growth of a single-walled carbon nanotube (SWNT) network that are easy to fabricate. High-performance SWNT-TFTs exhibit optical transmission of 80% in visible wavelength, I-on/I-off higher than 10(3), and a high yield with reproducible electrical characteristics.

引用

页码：2994 / 2998

页数：5

共 15 条

[1]

Bai JW, 2010, NAT NANOTECHNOL, V5, P190, DOI [10.1038/NNANO.2010.8, 10.1038/nnano.2010.8]

[2] Highly bendable, transparent thin-film transistors that use carbon-nanotube-based conductors and semiconductors with elastomeric dielectrics [J].

Cao, Q ;

Hur, SH ;

Zhu, ZT ;

Sun, YG ;

Wang, CJ ;

Meitl, MA ;

Shim, M ;

Rogers, JA .

ADVANCED MATERIALS, 2006, 18 (03) :304-+

[3] Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates [J].

Cao, Qing ;

Kim, Hoon-sik ;

Pimparkar, Ninad ;

Kulkarni, Jaydeep P. ;

Wang, Congjun ;

Shim, Moonsub ;

Roy, Kaushik ;

Alam, Muhammad A. ;

Rogers, John A. .

NATURE, 2008, 454 (7203) :495-U4

[4]

DOBSON MA, 1985, PHYS REV B, V32, P6255

[5] HIGHLY EFFICIENT ALGORITHM FOR PERCOLATIVE TRANSPORT STUDIES IN 2 DIMENSIONS [J].

FRANK, DJ ;

LOBB, CJ .

PHYSICAL REVIEW B, 1988, 37 (01) :302-307

[6] Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays [J].

Javey, A ;

Guo, J ;

Farmer, DB ;

Wang, Q ;

Yenilmez, E ;

Gordon, RG ;

Lundstrom, M ;

Dai, HJ .

NANO LETTERS, 2004, 4 (07) :1319-1322

[7] Fabrication of fully transparent nanowire transistors for transparent and flexible electronics [J].

Ju, Sanghyun ;

Facchetti, Antonio ;

Xuan, Yi ;

Liu, Jun ;

Ishikawa, Fumiaki ;

Ye, Peide ;

Zhou, Chongwu ;

Marks, Tobin J. ;

Janes, David B. .

NATURE NANOTECHNOLOGY, 2007, 2 (06) :378-384

[8] Atomic layer deposited Al2O3 for gate dielectric and passivation layer of single-walled carbon nanotube transistors [J].

Kim, S. K. ;

Xuan, Y. ;

Ye, P. D. ;

Mohammadi, S. ;

Back, J. H. ;

Shim, Moonsub .

APPLIED PHYSICS LETTERS, 2007, 90 (16)

[9] Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes [J].

Kim, Sunkook ;

Ju, Sanghyun ;

Back, Ju Hee ;

Xuan, Yi ;

Ye, Peide D. ;

Shim, Moonsub ;

Janes, David B. ;

Mohammadi, Saeed .

ADVANCED MATERIALS, 2009, 21 (05) :564-+

[10] Hysteresis caused by water molecules in carbon nanotube field-effect transistors [J].

Kim, W ;

Javey, A ;

Vermesh, O ;

Wang, O ;

Li, YM ;

Dai, HJ .

NANO LETTERS, 2003, 3 (02) :193-198

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