Fully Transparent Thin-Film Transistors Based on Aligned Carbon Nanotube Arrays and Indium Tin Oxide Electrodes

被引：55

作者：

Kim, Sunkook ^{[1
,2
]}

Ju, Sanghyun ^{[3
]}

Back, Ju Hee ^{[4
]}

Xuan, Yi ^{[1
,2
]}

Ye, Peide D. ^{[1
,2
]}

Shim, Moonsub ^{[4
]}

Janes, David B. ^{[1
,2
]}

Mohammadi, Saeed ^{[1
,2
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Kyonggi Univ, Dept Phys, Suwon 443760, Gyeonggi Do, South Korea

[4] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1002/adma.200801032

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Fully transparent thin-film transistors (FFTs) based on well-aligned single-walled carbon nanotube (SWCNT) arrays with indium tin oxide (ITO) electrodes are achieved. The fully transparent SWCNT-TFTs could be attractive candidates for future flexible or transparent electronics.

引用

页码：564 / +

页数：6

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