CuInSe2 thin films formed by selenization of Cu-In precursors

被引：27

作者：

Calixto, ME ^{[1
]}

Sebastian, PJ ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Inst Invest Mat, Lab Energia Solar, Temixco 62580, Morelos, Mexico

来源：

JOURNAL OF MATERIALS SCIENCE | 1998年 / 33卷 / 02期

关键词：

D O I：

10.1023/A:1004311527795

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CulnSe(2) (CIS) thin films were grown by selenization of electro-deposited or electroless-deposited Cu-In precursors. Cu-In precursors were formed by layer-by-layer electrodeposition of Cu and In as well as by electroless co-deposition of Cu and In. The major phases in the precursors were found to be Cu11In9 and elemental In. It was found that the stoichiometric CIS phase (CuInSe2) may be formed by selenization of the precursors at temperatures higher than 500 degrees C. The Cu-In precursors as well as CIS films were characterized by X-ray diffraction and scanning electron microscopy. The cubic CIS phase was formed when electroless-deposited Cu-In precursor was selenized, whereas the chalcopyrite CIS or the In-rich phase (CuIn2Se3.5) was formed when the layered precursors were selenized at a high temperature.

引用

页码：339 / 345

页数：7

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