Nanocrystalline silicon with twin faults and reduced Debye temperature

被引：4

作者：

Vogel, W

Botti, S

Martelli, S

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] ENEA, Dipartimento Innovat, Settore Fis Applicata, Ctr Ric Frascati, I-00044 Rome, Italy

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1998年 / 17卷 / 07期

关键词：

D O I：

10.1023/A:1006505200323

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：527 / 529

页数：3

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