Ion bombardment effects during deposition of nitride and metal films

被引:54
作者
Ensinger, W [1 ]
机构
[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany
关键词
ion beam assisted deposition; titanium nitride; nickel; texture;
D O I
10.1016/S0257-8972(97)00410-6
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ion bombardment during physical vapour deposition of thin films, also called ion beam assisted deposition (IBAD), influences density, grain size, crystallographic orientation, morphology, topography and many other features of the films. The most important process parameters of IBAD are ion energy, ion:atom arrival ratio, average energy deposited per ion and angle of ion incidence. In the present review, with the example of nickel for metals and titanium nitride for nitride films, the influence of these parameters on structure, stress state, magnetic properties, hardness and microporosity will be described. The mechanisms which cause the property variations will be discussed. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:1 / 13
页数:13
相关论文
共 29 条
[1]   Texture of IBAD TiN films as a function of ion-beam intensity and angular incidence [J].
Alberts, L ;
Leutenecker, R ;
Wolf, GK .
SURFACE & COATINGS TECHNOLOGY, 1996, 84 (1-3) :443-447
[2]   CRYSTALLINE ORIENTATION CONTROL BY THE IVD METHOD [J].
ANDOH, Y ;
OGATA, K ;
YAMAKI, H ;
SAKAI, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4) :158-161
[3]   FORMATION OF POLYHEDRAL N-2 BUBBLES DURING REACTIVE SPUTTER DEPOSITION OF EPITAXIAL TIN(100) FILMS - COMMENT [J].
CHOU, TC .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) :2670-2672
[4]   MICROSTRUCTURAL INVESTIGATIONS ON TITANIUM NITRIDE FILMS FORMED BY MEDIUM-ENERGY ION-BEAM-ASSISTED DEPOSITION [J].
ENSINGER, W ;
RAUSCHENBACH, B .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 :1409-1414
[5]   GROWTH OF THIN-FILMS WITH PREFERENTIAL CRYSTALLOGRAPHIC ORIENTATION BY ION-BOMBARDMENT DURING DEPOSITION [J].
ENSINGER, W .
SURFACE & COATINGS TECHNOLOGY, 1994, 65 (1-3) :90-105
[6]   THE INFLUENCE OF THE PROCESS MODE OF ION-BEAM ASSISTED DEPOSITION ON OXYGEN IMPURITIES IN TITANIUM NITRIDE FILMS [J].
ENSINGER, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 56-7 :648-651
[7]   The influence of ion irradiation during film growth on the chemical stability of film substrate systems [J].
Ensinger, W .
SURFACE & COATINGS TECHNOLOGY, 1996, 80 (1-2) :35-48
[8]  
ENSINGER W, 1995, NUCL INSTRUM METH B, V106, P1409
[9]   Biaxial alignment of TiN films prepared by ion beam assisted deposition [J].
Gerlach, JW ;
Preckwinkel, U ;
Wengenmair, H ;
Kraus, T ;
Rauschenbach, B .
APPLIED PHYSICS LETTERS, 1996, 68 (17) :2360-2362
[10]  
GRABOWSKI KS, 1989, MATER RES SOC SYMP P, V128, P279