THE INFLUENCE OF THE PROCESS MODE OF ION-BEAM ASSISTED DEPOSITION ON OXYGEN IMPURITIES IN TITANIUM NITRIDE FILMS

被引:15
作者
ENSINGER, W
机构
[1] Universität Heidelberg, Institut für Physikalische Chemie, D-6900 Heidelberg
关键词
D O I
10.1016/0168-583X(91)96116-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Evaporation combined with ion bombardment (ion beam assisted deposition) was used in three different process modes, sequential, dynamic and rare gas mode, to synthesize TiN films. The purity of the films with respect to oxygen incorporation is compared. A theory based on adsorption kinetics and energetic arguments is proposed which explain the function of simultaneous ion bombardment in reduction of oxygen incorporation and the differences between the modes.
引用
收藏
页码:648 / 651
页数:4
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