KrF-excimer-laser induced absorption in synthetic fused silica

被引：8

作者：

Kamisugi, N

Kuzuu, N

Ihara, Y

Nakamura, T

机构：

[1] Nippon Silica Glass Yamaguchi Co Ltd, Yamaguchi 746, Japan

[2] Fukui Univ, Dept Appl Phys, Fukui 910, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 11期

关键词：

KrF excimer laser; optical materials; synthetic fused silica; E ' center; excimer laser induced absorption;

D O I：

10.1143/JJAP.36.6785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

KrF-excimer-laser (5.0 eV) induced absorption in synthetic fused silica synthesized by flame hydrolysis of SiCl4 (type-III-fused silica) was measured. Induced absorption is a Gaussian absorption band peaking at 5.8 eV, which is different from that of ArF-excimer-laser induced absorption consisting of Eve absorption bends at 6.5, 5,8, 5.4, 5.0 and 4.8eV. Peak intensities of the absorption band decrease with increasing OH content. When the OH content exceeds approximate to 1000 ppm in mass, the internal absorption at 5.0 eV approach a constant value approximate to 1 x 10(-4) cm(-1).

引用

页码：6785 / 6786

页数：2

共 9 条

[1] O-2 MOLECULES DISSOLVED IN SYNTHETIC SILICA GLASSES AND THEIR PHOTOCHEMICAL-REACTIONS INDUCED BY ARF EXCIMER LASER-RADIATION [J].